| PART |
Description |
Maker |
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| MA2J728 MA728 |
Schottky Barrier Diodes (SBD)
Silicon Epitaxial Planar Type Schottky Barrier Diodes
From old datasheet system
|
Matsshita / Panasonic
Mitsubishi
|
| MA2HD07 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| MBD770DWT1 |
Dual Schottky Barrier Diodes
|
Guangdong Kexin Industrial Co.,Ltd
|
| MBD110DWT1G07 |
Dual Schottky Barrier Diodes
|
ON Semiconductor
|
| BAT54STBL-AN3-R BAT54STBG-AN3-R |
SCHOTTKY BARRIER (DUAL) DIODES
|
Unisonic Technologies
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| LBAT54AWT1G LBAT54AWT3G |
Dual Series Schottky Barrier Diodes
|
Leshan Radio Company
|
| BAT54SLT1-D |
Dual Series Schottky Barrier Diodes
|
ON Semiconductor
|
| BAT54RSLT1 |
Dual Series Schottky Barrier Diodes
|
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
